D814

Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 0.95 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.5 –0.05 +0.25 0.65±0.15 0.95 2.9 –0.05 1 1.9±0.2 +0.2 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD814 2SD814A 2SD814 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 2 1.45 1.1 –0.1 +0.2 Ratings 150 185 150 185 5 100 50 200 150 –55 ~ +150 Unit V emitter voltage 2SD814A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : P(2SD814) L(2SD814A) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SD814 2SD814A (Ta=25˚C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = 100V, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 150 2.3 150 150 185 5 90 330 1 V MHz pF mV min typ max 1 Unit µA V V Emitter to base voltage Forward current transf...