NT5CC512M8CN

DDR3(L) 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP Nanya Technology Corp. NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  JEDEC DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/ ) - Double-data rate on DQs, DQS and DM  Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%)  Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes  Signal Synchronization - Write Leveling via MR settings - Read Leveling via MPR  Power Saving Mode - Partial Array Self Refresh (PASR) - Power Down Mode 1  Interface and Power Supply - SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V) - SSTL_135 for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V) 4 Options  Speed Grade (CL-TRCD-TRP) - 2133 Mbps / 14-14-14 - 1866 Mbps / 13-13-13 - 1600 Mbps / 11-11-11 2,3  Temperature Range (Tc) 5 - Commercial Grade = 0℃ ~95℃ - Industrial Grade = -40℃ ~95℃ - Automotive Grade 2 = -40℃ ~105℃ - Automotive Grade 3 = -40℃ ~95℃ Programmable Functions       CAS Latency (5/6/7/8/9/10/11/12/13/14) CAS Write Latency (5/6/7/8/9/10) Additive Latency (0/CL-1/CL-2) Write Recovery Time (5/6/7/8/10/12/14/16) Burst Type (Sequential/Interleaved) Burst Length (BL8/BC4/BC4 or 8 on the fly)      Self RefreshTemperature Range(Normal/Extended) Output Driver Impedance (34/40)...