24N60C3

SPW24N60C3 CoolMOSTM Power Transistor Features New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID 650 0.16 24.3 V Ω A P-TO247 Type SPW24N60C3 Package P-TO247 Ordering Code Q67040-S4640 Marking 24N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1) Drain source voltage slope Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V GS Power dissipation Operating and storage temperature Rev. 1.0 P tot T j, T stg page 1 I D=24.3 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) T C=25 °C T C=25 °C I D=12.1 A, V DD=50 V I D=24.3 A, V DD=50 V Value 24.3 15.4 72.9 780 1.5 24.3 50 ±20 ±30 240 -55 ... 150 W °C 2004-04-27 Free Datasheet http://www.0PDF.com Unit A mJ A V/ns V SPW24N60C3 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.52 62 K/W Values typ. max. Unit T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdow...