FQPF9N25CT

FQPF9N25C / FQPF9N25CT — N-Channel QFET® MOSFET November 2013 FQPF9N25C / FQPF9N25CT N-Channel QFET® MOSFET 250 V, 8.8 A, 430 mΩ Features 8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A Low Gate Charge (Typ. 26.5 nC) Low Crss (Typ. 45.5 pF) 100% Avalanche Tested Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D G D S G TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Drain Current Drain Current Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 2) (Note 1) (Note 1) (Note 3) FQPF9N25C / FQPF9N25CT 250 8.8 * 5.6 * (Note 1) Unit V A A A V mJ A mJ V/ns W W/°C °C °C - Continuous (TC = 100oC) - Pulsed - Continuous (TC = 25oC) 35.2 * ± 30 285 8.8 7.4 5.5 38 0.3 -55 to +150 300 Operating and Storage Temperature Range Maximum Lead Temperature f...