HS1010E
N channel 60V MOSFET
1. Description The HS1010E is the N-Channel logic enhancement mode power field effect trans...
HS1010E
N channel 60V MOSFET
1. Description The HS1010E is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.
2. Feature ● RDS(ON)≦9mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability VDS RDS(on) ID 60 9 85 V mΩ A
3. Pin configuration
Order Number HS1010E
Package TO-220
TO-220
Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved. Oct,2012-Ver1.0
www.homsemi.com
1/5
Free Datasheet http://www.0PDF.com
HS1010E
N channel 60V MOSFET
4. Absolute maximum ratings (T C=25℃ Unless Otherwise Noted) Parameter
Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current TC=70℃ Pulsed Drain Current TC=25℃ Power Dissipation TC=70℃ Operating Junction and Storage Temperature Range TJ, Tstg PD 140 -55 to 175 ℃ IDM ID 71 350 200 W A A
Symbol
VDSS VGSS
Limit
60 ± 20 85
Unit
V V A
5. Thermal characteristics Parameter
Thermal resistance, case-to-sink typ. Thermal resistance junction to case. Thermal resistance junction to ambient.
Symbol
RthCS RthJC RthJA
Ratings
0.5 0.75 62
Units
° C/W ° C/W ° C/W
Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved. www.homsemi.com Oct,2012-Ver1.0
2/5
Free Datasheet http://www.0PDF.com
HS1010E
N channel 60V MOSFET
6. Electrical characteristics (T A =25℃ Unless ...
