This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG002
N-channel enhancement mode IGBT
For plasma ...
This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG002
N-channel enhancement mode IGBT
For plasma display panel drive For high speed switching circuits Features
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High speed hall time: tf = 190 nsec(typ.)
Package
Code TO-220F-A1 Marking Symbol: 2PG002 Pin Name 1. Gate 2. Collector 3. Emitter
Parameter
Symbol VCES IC VGES ICP PC Tj
Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation
Ta = 25°C
Junction temperature Storage temperature
Tstg
Note) *: PW ≤ 10 us, Duty ≤ 1.0%
Electrical Characteristics TC = 25°C±3°C
Parameter Collector-emitter voltage (E-B short)
Symbol VCES ICES IGES
Gate-emitter cutoff current (E-B short) Gate-emitter threshold voltage Collector-emitter saturation voltage
on tin
ue
Collector-emitter cutoff current (E-B short)
/D isc
VGE(th) Cies
VCE(sat) Coes Cres Qg Qge Qgc tr td(off) tf
Gate charge load
M ain
Reverse transfer capacitance (Common emitter) Gate-emitter charge Turn-on delay time Rise time Turn-off delay time Fall time
te na
Short-circuit output capacitance (Common emitter)
nc e
Short-circuit input capacitance (Common emitter)
Gate-collector charge
Pl
td(on) VCC = 200 V, IC = 40 A, RL ≈ 5 Ω, VGE = 15 V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for
transistors.
d p l ea an incl se ed ud p lan m ...