60N20F Datasheet: IXFH60N20F





60N20F IXFH60N20F Datasheet

Part Number 60N20F
Description IXFH60N20F
Manufacture IXYS
Total Page 2 Pages
PDF Download Download 60N20F Datasheet PDF

Features: Advance Technical Information HiPerRFTM Power MOSFET F-Class: MegaHertz Switch ing N-Channel Enhancement Mode Avalanch e Rated Fast Intrinsic Diode IXFH60N20 F IXFT60N20F VDSS ID25 RDS(on) trr = = ≤ ≤ 200V 60A 38mΩ 200ns TO-24 7 Symbol VDSS VDGR VGSS VGSM ID25 IDM I A EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for sol dering Plastic body for 10s Mounting to rque (TO-247) TO-247 TO-268 Test Condit ions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transien t TC = 25°C TC = 25°C, pulse width li mited by TJM TC = 25°C TC = 25°C IS IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 200 200 ± 20 30 60 240 60 1.5 10 320 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 4 V V V V A A A J V/ns W °C °C °C °C ° C Nm/lb.in. g g Features z z z z TAB TO-268 G S TAB G = Gate S = Source D = Drain TAB = Drain z z Internation al standard packages Avalanche Rated RF capable MOSFETs Double metal process for low gate resistnace Low package inductance Fast in.

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Advance Technical Information
HiPerRFTM
Power MOSFET
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH60N20F
IXFT60N20F
VDSS =
ID25 =
RDS(on)
trr
200V
60A
38mΩ
200ns
TO-247
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
200
200
± 20
± 30
60
240
60
1.5
V
V
V
V
A
A
A
J
10 V/ns
320
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10
6
4
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
200 V
3.0 5.0 V
± 100 nA
50 μA
1.5 mA
38 mΩ
TO-268
TAB
GS
TAB
G = Gate D = Drain
S = Source TAB = Drain
Features
z International standard packages
z Avalanche Rated
z RF capable MOSFETs
z Double metal process for low gate
resistnace
z Low package inductance
z Fast intrinsic diode
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies, >500kHz switching
z DC-DC Converters
z Laser Drivers
z 13.5 Mhz industrial applications
z Pulse generation
© 2008 IXYS CORPORATION, All rights reserved
DS98885A(11/08)
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