MDF7N60

MDF7N60 N-channel MOSFET 600V MDF7N60 N-Channel MOSFET 600V, 7A, 1.15Ω General Description The MDF7N60 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF7N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS = 660V @ Tjmax  ID = 7.0A @ VGS = 10V  RDS(ON) ≤ 1.15Ω @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching GDS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current(1) Characteristics Power Dissipation Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 600 660 ±30 7.0 4.4 28 42 0.33 4.2 4.5 220 -55~150 Unit V V V A A A W W/ oC V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Aug. 2021. Version 2.4 1 Symbol RθJA RθJC Rating 62.5 3.01 Unit oC/W Magnachip Semiconductor Ltd. MDF7N60 N-channel MOSFET 600V Ordering Information Part Number MDF7N60TH Marking MDF7N60 Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Elec...