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J6806D Dataheets PDF



Part Number J6806D
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description FJAF6806D
Datasheet J6806D DatasheetJ6806D Datasheet (PDF)

FJAF6806D FJAF6806D High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) • High Collector-Base Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.) =0.1µs • For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter Equivalent Circuit C B NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C.

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FJAF6806D FJAF6806D High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) • High Collector-Base Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.) =0.1µs • For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter Equivalent Circuit C B NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature 50Ω typ. E Rating 1500 750 6 6 12 50 150 -55 ~ 150 Units V V V A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB=1A IF = 4.5A VCC=200V, IC=4A, RL=50Ω IB1=1.0A, IB2= - 2.0A 40 6 8 4 7 5 1.5 2 3 0.2 V V V µs µs Min Typ Max 1 10 200 Units mA µA mA V * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ Max 2.5 Units °C/W ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 Free Datasheet http://www.0PDF.com FJAF6806D Typical Characteristics 8 100 7 VCE = 5V IB = 2.0A Ta = 25 C o o IC [A], COLLECTOR CURRENT hFE, DC CURRENT GAIN 6 Ta = 125 C 5 IB = 0.8A 4 IB = 0.6A IB = 0.4A IB = 0.2A 10 Ta = - 25 C o 3 2 1 0 0 2 4 6 8 10 1 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VCE(sat) [V], SATURATION VOLTAGE Ta = - 25 C 1 o o VCE(sat) [V], SATURATION VOLTAGE IC = 5 IB Ta = 125 C o IC = 3 IB Ta = 125 C o 1 Ta = 25 C Ta = 25 C o Ta = - 25 C 0.1 o 0.1 0.01 0.1 1 10 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 10 VCE = 5 V 8 tSTG & tF [µ s], SWITCHING TIME IC [A], COLLECTOR CURRENT tSTG 1 6 4 Ta = 25 C o 2 Ta = 125 C Ta = - 25 C o o tF VCC = 200V, IC = 4A, IB1 = 1A 0.1 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VBE [V], BASE-EMITTER ON VOLTAGE IB2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 Free Datasheet http://www.0PDF.com FJAF6806D Typical Characteristics (Continued) 10 tSTG & tF [µs], SWITCHING TIME tSTG tSTG & tF [µ s], SWITCHING TIME.


TA8123AF J6806D 2SC983


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