Document
FJAF6806D
FJAF6806D
High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In)
• High Collector-Base Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.) =0.1µs • For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter
Equivalent Circuit C
B
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
50Ω typ. E
Rating 1500 750 6 6 12 50 150 -55 ~ 150
Units V V V A A W °C °C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB=1A IF = 4.5A VCC=200V, IC=4A, RL=50Ω IB1=1.0A, IB2= - 2.0A 40 6 8 4 7 5 1.5 2 3 0.2 V V V µs µs Min Typ Max 1 10 200 Units mA µA mA V
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics TC=25°C unless otherwise noted
Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ Max 2.5 Units °C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
Free Datasheet http://www.0PDF.com
FJAF6806D
Typical Characteristics
8 100
7
VCE = 5V
IB = 2.0A Ta = 25 C
o o
IC [A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
6
Ta = 125 C
5
IB = 0.8A
4
IB = 0.6A IB = 0.4A IB = 0.2A
10
Ta = - 25 C
o
3
2
1
0 0 2 4 6 8 10
1 0.1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
VCE(sat) [V], SATURATION VOLTAGE
Ta = - 25 C
1
o
o
VCE(sat) [V], SATURATION VOLTAGE
IC = 5 IB
Ta = 125 C
o
IC = 3 IB
Ta = 125 C
o
1
Ta = 25 C
Ta = 25 C
o
Ta = - 25 C
0.1
o
0.1
0.01 0.1
1
10
0.01 0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
10
VCE = 5 V
8
tSTG & tF [µ s], SWITCHING TIME
IC [A], COLLECTOR CURRENT
tSTG
1
6
4
Ta = 25 C
o
2
Ta = 125 C Ta = - 25 C
o
o
tF
VCC = 200V, IC = 4A, IB1 = 1A
0.1 1
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VBE [V], BASE-EMITTER ON VOLTAGE
IB2 [A], REVERSE BASE CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Resistive Load Switching Time
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
Free Datasheet http://www.0PDF.com
FJAF6806D
Typical Characteristics (Continued)
10
tSTG & tF [µs], SWITCHING TIME
tSTG
tSTG & tF [µ s], SWITCHING TIME.