BTS240A

TEMPFET BTS 240A Features ● N channel ● Enhancement mode ● Temperature sensor with thyristor characteristic ● The drain pin is electrically shorted to the tab ● AEC qualified ● Green product (RoHS compliant) 3 2 1 Pin 1 2 3 G D S Type BTS 240A VDS 50 V ID 58 A RDS(on) 0.018 Ω Package PG-TO-218 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 73 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, TC = 25 °C Short circuit current, Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range Thermal resistance Chip-case Chip-ambient Symbol VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg Rth JC Rth JA Values 50 50 ± 20 58 21.0 232 147 2200 170 – 55 ... + 150 ≤ 0.74 ≤ 45 Unit V A W °C K/W Datasheet 1 Rev. 1.2, 2010-07-12 TEMPFET BTS 240A Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID =47 A V(BR)DSS VGS(th) IDSS IGSS RDS(on) Dynamic Characteristics Forward transconductance gfs VDS ≥ 2 × ID × R , DS(on)max...