N-Channel MOSFET
TEMPFET BTS 240A
Features
● N channel ● Enhancement mode ● Temperature sensor with thyristor characteristic ● The drain...
Description
TEMPFET BTS 240A
Features
● N channel ● Enhancement mode ● Temperature sensor with thyristor characteristic ● The drain pin is electrically shorted to the tab ● AEC qualified ● Green product (RoHS compliant)
3 2 1
Pin
1
2
3
G
D
S
Type BTS 240A
VDS
50 V
ID
58 A
RDS(on)
0.018 Ω
Package PG-TO-218
Maximum Ratings
Parameter Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Continuous drain current, TC = 73 °C
ISO drain current
TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, TC = 25 °C Short circuit current, Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ... + 150 °C
Power dissipation
Operating and storage temperature range
Thermal resistance Chip-case Chip-ambient
Symbol
VDS VDGR VGS ID ID-ISO
ID puls ISC PSCmax Ptot Tj, Tstg
Rth JC Rth JA
Values 50 50 ± 20 58 21.0
232 147 2200 170 – 55 ... + 150
≤ 0.74 ≤ 45
Unit V
A
W °C K/W
Datasheet
1
Rev. 1.2, 2010-07-12
TEMPFET BTS 240A
Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
Gate threshold voltage
VGS = VDS, ID = 1 mA
Zero gate voltage drain current
VGS = 0 V, VDS = 50 V
Tj = 25 °C Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0
Tj = 25 °C Tj = 150 °C
Drain-source on-state resistance
VGS = 10 V, ID =47 A
V(BR)DSS VGS(th) IDSS
IGSS
RDS(on)
Dynamic Characteristics
Forward transconductance
gfs
VDS ≥ 2 × ID × R , DS(on)max...
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