IR2102S

Data Sheet No. PD60043 Rev.O IR2101(S)/IR2102(S) &(PbF) HIGH AND LOW SIDE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout 3.3V, 5V, and 15V logic input compatible Matched propagation delay for both channels Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102) Also available LEAD-FREE Product Summary VOFFSET IO+/VOUT ton/off (typ.) Delay Matching 600V max. 130 mA / 270 mA 10 - 20V 160 & 150 ns 50 ns Packages Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Pro8-Lead SOIC 8-Lead PDIP prietary HVIC and latch immune CMOS technologies IR2101S/IR2102S IR2101/IR2102 enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to 600V VCC VCC HIN LIN VB HO VS LO TO LOAD HIN LIN COM IR2101 VCC up to 600V VCC HIN VB HO VS LO TO LOAD HIN LIN COM (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical conne...