DatasheetsPDF.com

FDPF320N06L Dataheets PDF



Part Number FDPF320N06L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDPF320N06L DatasheetFDPF320N06L Datasheet (PDF)

FDPF320N06L — N-Channel Logic Level PowerTrench® MOSFET December 2013 FDPF320N06L N-Channel Logic Level PowerTrench® MOSFET 60 V, 21 A, 25 mΩ Features • RDS(on) = 20 mΩ (Typ.) @ VGS = 10 V, ID = 21 A • RDS(on) = 23 mΩ (Typ.) @ VGS = 5 V, ID = 17 A • Low Gate Charge (Typ. 23.2 nC) • Low Crss (Typ. 64 pF) • Fast Switching Speed • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®.

  FDPF320N06L   FDPF320N06L



Document
FDPF320N06L — N-Channel Logic Level PowerTrench® MOSFET December 2013 FDPF320N06L N-Channel Logic Level PowerTrench® MOSFET 60 V, 21 A, 25 mΩ Features • RDS(on) = 20 mΩ (Typ.) @ VGS = 10 V, ID = 21 A • RDS(on) = 23 mΩ (Typ.) @ VGS = 5 V, ID = 17 A • Low Gate Charge (Typ. 23.2 nC) • Low Crss (Typ. 64 pF) • Fast Switching Speed • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Consumer Appliances • LCD/LED/PDP TV D GDS G TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDPF320N06L 60 ±20 21 15 84 66 6.0 26 0.17 -55 to +175 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDPF320N06L 5.8 62.5 Unit V V A A mJ V/ns W W/oC oC oC Unit oC/W ©2011 Fairchild Semiconductor Corporation 1 FDPF320N06L Rev. C3 www.fairchildsemi.com FDPF320N06L — N-Channel Logic Level PowerTrench® MOSFET Package Marking and Ordering Information Part Number FDPF320N06L Top Mark FDPF320N06L Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC VDS = 48 V, VGS = 0 V VDS = 48 V, TC = 150oC VGS = ±20 V, VDS = 0 V On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = 250 μA VGS = 10 V, ID = 21 A VGS = 5 V, ID = 17 A VDS = 10 V, ID = 21 A Dynamic Characteristics Ciss Coss Crss Qg(tot) Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Total Gate Charge at 5V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 25 V, VGS = 0 V f = 1 MHz VGS = 10 V VGS = 5 V VDS = 48 V, ID = 21 A (Note 4) Switching Characteristics td(on) tr td(off) tf ESR Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Equivalent Series Resistance (G-S) VDD = 30 V, ID = 21 A, VGS = 5 V, RG = 4.7 Ω f = 1MHz (Note 4) Min. 60 - 1.0 - - - Typ. 0.04 - 20 23 34 1105 115 64 23.2 12.7 3.4 6.3 16 34 27 8 2 Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - ISM Maximum Pulsed Drain to Source Diode Forward Current - - VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 21 A - - trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 21 A,VDD = 48 V, - 27 dIF/dt = 100 A/μs - 23 Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 1 mH, IAS = 11.5 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 21 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. Quantity 50 units Max. Unit - - 1 500 ±100 V V/oC μA μA 2.5 V 25 mΩ 38 mΩ - S 1470 pF 150 pF - pF 30.2 nC 16.5 nC - nC - nC 42 ns 78 ns 64 ns 26 ns - Ω 21 A 84 A 1.3 V - ns - nC ©2011 Fairchild Semiconductor Corporation 2 FDPF320N06L Rev. C3 www.fairchildsemi.com FDPF320N06L — N-Channel Logic Level PowerTrench® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 200 VGS = 15.0V 100 10.0V 8.0V 5.0V 4.0V 3.5V 3.0V ID, Drain Current[A] 10 *Notes: 1. 250μs Pulse Test 2. TC = 25oC 2 0.1 1 4 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.04 ID, Drain Current[A] Figure 2. Transfer Characteristics 100 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 175oC 10 25oC -55oC 1 1 2 3 4 5 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.03 0.02 VGS = 10V VGS = 20V 0.01 0 *Note: TC = 25oC 20 40 60 80 100 ID, Drain Current [A] Figure 5. Capacitance Characteristics 4000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Cr.


FDPF33N25T FDPF320N06L UAR64-8W5J00


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)