Document
FDPF320N06L — N-Channel Logic Level PowerTrench® MOSFET
December 2013
FDPF320N06L
N-Channel Logic Level PowerTrench® MOSFET
60 V, 21 A, 25 mΩ
Features
• RDS(on) = 20 mΩ (Typ.) @ VGS = 10 V, ID = 21 A • RDS(on) = 23 mΩ (Typ.) @ VGS = 5 V, ID = 17 A • Low Gate Charge (Typ. 23.2 nC) • Low Crss (Typ. 64 pF) • Fast Switching Speed • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Consumer Appliances • LCD/LED/PDP TV
D
GDS
G
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 1) (Note 2) (Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDPF320N06L 60 ±20 21 15 84 66 6.0 26 0.17
-55 to +175 300
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
FDPF320N06L 5.8 62.5
Unit V V A A mJ
V/ns W
W/oC oC oC
Unit oC/W
©2011 Fairchild Semiconductor Corporation
1
FDPF320N06L Rev. C3
www.fairchildsemi.com
FDPF320N06L — N-Channel Logic Level PowerTrench® MOSFET
Package Marking and Ordering Information
Part Number FDPF320N06L
Top Mark FDPF320N06L
Package TO-220F
Packing Method Tube
Reel Size N/A
Tape Width N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC
VDS = 48 V, VGS = 0 V VDS = 48 V, TC = 150oC VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 μA VGS = 10 V, ID = 21 A VGS = 5 V, ID = 17 A VDS = 10 V, ID = 21 A
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qg(tot) Qgs Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Total Gate Charge at 5V Gate to Source Gate Charge Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V f = 1 MHz
VGS = 10 V VGS = 5 V VDS = 48 V, ID = 21 A
(Note 4)
Switching Characteristics
td(on) tr td(off) tf ESR
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Equivalent Series Resistance (G-S)
VDD = 30 V, ID = 21 A, VGS = 5 V, RG = 4.7 Ω f = 1MHz
(Note 4)
Min.
60 -
1.0 -
-
-
Typ.
0.04
-
20 23 34
1105 115 64 23.2 12.7 3.4 6.3
16 34 27 8 2
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 21 A
-
-
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 21 A,VDD = 48 V,
-
27
dIF/dt = 100 A/μs
-
23
Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1 mH, IAS = 11.5 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 21 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics.
Quantity 50 units
Max. Unit
-
-
1 500 ±100
V V/oC
μA μA
2.5
V
25
mΩ
38
mΩ
-
S
1470 pF
150
pF
-
pF
30.2 nC
16.5 nC
-
nC
-
nC
42
ns
78
ns
64
ns
26
ns
-
Ω
21
A
84
A
1.3
V
-
ns
-
nC
©2011 Fairchild Semiconductor Corporation
2
FDPF320N06L Rev. C3
www.fairchildsemi.com
FDPF320N06L — N-Channel Logic Level PowerTrench® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
VGS = 15.0V
100
10.0V 8.0V
5.0V
4.0V
3.5V
3.0V
ID, Drain Current[A]
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
2
0.1
1
4
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.04
ID, Drain Current[A]
Figure 2. Transfer Characteristics
100 *Notes: 1. VDS = 10V 2. 250μs Pulse Test
175oC
10
25oC
-55oC
1
1
2
3
4
5
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
IS, Reverse Drain Current [A]
RDS(ON) [Ω], Drain-Source On-Resistance
0.03
0.02
VGS = 10V VGS = 20V
0.01 0
*Note: TC = 25oC
20
40
60
80
100
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
4000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Cr.