Document
PD - 97696A AUTOMOTIVE GRADE
AUIRF3504
Features l Advanced Planar Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
HEXFET® Power MOSFET
D
G S
V(BR)DSS 40V RDS(on) typ. 7.8mΩ max 9.2mΩ ID 87A
D
G TO-220AB AUIRF3504
D
S
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current
Max.
87 61 350 143 0.95 ± 20 199 368 See Fig. 12a, 12b, 15, 16 -55 to + 175
Units
A W W/°C V mJ A mJ °C
c
PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS EAS (tested) IAR EAR TJ TSTG Single Pulse Avalanche Energy Tested Value Avalanche Current
Single Pulse Avalanche Energy (Thermally Limited)
c
i
d
Repetitive Avalanche Energy Operating Junction and
h
Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw
300 10 lbf in (1.1N m)
Thermal Resistance
RθJC RθCS RθJA Junction-to-Case
y
y
j
Parameter
Typ.
––– 0.50 –––
Max.
1.05 ––– 62
Units
°C/W
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/30/11
Free Datasheet http://www.Datasheet4U.com
AUIRF3504
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
40 ––– ––– 2.0 46 ––– ––– ––– ––– ––– 0.04 7.8 ––– ––– ––– ––– ––– ––– ––– ––– 9.2 4.0 ––– 20 250 200 -200
Conditions
V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 52A V VDS = VGS, ID = 100μA S VDS = 10V, ID = 52A μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 36 12 13 9.9 61 24 29 4.5 7.5 2150 600 54 2885 526 147 54 18 20 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC
Conditions
ID = 52A VDS = 32V VGS = 10V VDD = 20V ID = 52A RG = 2.7 Ω VGS = 10V Between lead,
f f
ns
D
nH
6mm (0.25in.) from package
G
pF
g
S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– 65 144 87 A 350 1.3 98 216 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
Ã
S p-n junction diode. TJ = 25°C, IS = 52A, VGS = 0V TJ = 25°C, IF = 52A di/dt = 100A/μs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25°C, L = 0.15mH RG = 50Ω, IAS = 52A. (See Figure 12). ISD ≤ 52A, di/dt ≤ 6750A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty.