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AUIRF3504 Dataheets PDF



Part Number AUIRF3504
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet AUIRF3504 DatasheetAUIRF3504 Datasheet (PDF)

PD - 97696A AUTOMOTIVE GRADE AUIRF3504 Features l Advanced Planar Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fa.

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PD - 97696A AUTOMOTIVE GRADE AUIRF3504 Features l Advanced Planar Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. HEXFET® Power MOSFET D G S V(BR)DSS 40V RDS(on) typ. 7.8mΩ max 9.2mΩ ID 87A D G TO-220AB AUIRF3504 D S G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current Max. 87 61 350 143 0.95 ± 20 199 368 See Fig. 12a, 12b, 15, 16 -55 to + 175 Units A W W/°C V mJ A mJ °C c PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS EAS (tested) IAR EAR TJ TSTG Single Pulse Avalanche Energy Tested Value Avalanche Current Single Pulse Avalanche Energy (Thermally Limited) c i d Repetitive Avalanche Energy Operating Junction and h Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 300 10 lbf in (1.1N m) Thermal Resistance RθJC RθCS RθJA Junction-to-Case y y j Parameter Typ. ––– 0.50 ––– Max. 1.05 ––– 62 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 08/30/11 Free Datasheet http://www.Datasheet4U.com AUIRF3504 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 40 ––– ––– 2.0 46 ––– ––– ––– ––– ––– 0.04 7.8 ––– ––– ––– ––– ––– ––– ––– ––– 9.2 4.0 ––– 20 250 200 -200 Conditions V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 52A V VDS = VGS, ID = 100μA S VDS = 10V, ID = 52A μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 36 12 13 9.9 61 24 29 4.5 7.5 2150 600 54 2885 526 147 54 18 20 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC Conditions ID = 52A VDS = 32V VGS = 10V VDD = 20V ID = 52A RG = 2.7 Ω VGS = 10V Between lead, f f ns D nH 6mm (0.25in.) from package G pF g S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 65 144 87 A 350 1.3 98 216 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ù S p-n junction diode. TJ = 25°C, IS = 52A, VGS = 0V TJ = 25°C, IF = 52A di/dt = 100A/μs f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Starting TJ = 25°C, L = 0.15mH RG = 50Ω, IAS = 52A. (See Figure 12). ƒ ISD ≤ 52A, di/dt ≤ 6750A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 400μs; duty.


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