Document
AUTOMOTIVE GRADE
AUIRF7207Q
8
Features Advanced Process Technology Low On-Resistance P-Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified* Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
S
S
S G
1
A D D D D
VDSS RDS(on) max ID
-20V 0.06 -5.4A
2
7
3
6
4
5
Top View
SO-8
Base part number AUIRF7207Q
Package Type SO-8
Standard Pack Form Tube Tape and Reel Quantity 95 2500
Orderable Part Number AUIRF7207Q AUIRF7207QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS VGSM EAS TJ TSTG Thermal Resistance Symbol RJA
Parameter Drain-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy (Thermally Limited) Operating Junction and Storage Temperature Range
Max. -20 -5.4 -4.3 -43 2.5 1.6 0.02 ± 12 -16 140 -55 to + 150
Units V A
W W/°C V V mJ °C
Parameter Junction-to-Ambient
Typ. –––
Max. 50
Units °C/W
HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2013 International Rectifier
April 30, 2013
Free Datasheet
http://www.Datasheet4
AUIRF7207Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– ––– -0.011 ––– V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– ––– 0.06 Static Drain-to-Source On-Resistance RDS(on) ––– ––– 0.125 Gate Threshold Voltage -0.7 ––– -1.6 VGS(th) gfs Forward Transconductance 8.3 ––– ––– ––– ––– -1.0 Drain-to-Source Leakage Current IDSS ––– ––– -25 IGSS Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 Dynamic Electrical Characteristics @ TJ.