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AUIRF7207Q Dataheets PDF



Part Number AUIRF7207Q
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet AUIRF7207Q DatasheetAUIRF7207Q Datasheet (PDF)

  AUTOMOTIVE GRADE AUIRF7207Q 8 Features  Advanced Process Technology  Low On-Resistance  P-Channel MOSFET  Dynamic dV/dT Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free, RoHS Compliant  Automotive Qualified* Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fa.

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  AUTOMOTIVE GRADE AUIRF7207Q 8 Features  Advanced Process Technology  Low On-Resistance  P-Channel MOSFET  Dynamic dV/dT Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free, RoHS Compliant  Automotive Qualified* Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.  S S S G 1 A D D D D VDSS RDS(on) max ID -20V 0.06 -5.4A 2 7 3 6 4 5 Top View   SO-8 Base part number AUIRF7207Q Package Type SO-8 Standard Pack Form Tube Tape and Reel Quantity 95 2500 Orderable Part Number AUIRF7207Q AUIRF7207QTR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS VGSM EAS TJ TSTG Thermal Resistance Symbol RJA Parameter Drain-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy (Thermally Limited)  Operating Junction and Storage Temperature Range Max. -20 -5.4 -4.3 -43 2.5 1.6 0.02 ± 12 -16 140 -55 to + 150 Units V A W W/°C V V mJ °C   Parameter Junction-to-Ambient  Typ. ––– Max. 50 Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2013 International Rectifier April 30, 2013 Free Datasheet http://www.Datasheet4   AUIRF7207Q Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)   Symbol Parameter Min. Typ. Max. V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– ––– -0.011 ––– V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– ––– 0.06 Static Drain-to-Source On-Resistance RDS(on) ––– ––– 0.125 Gate Threshold Voltage -0.7 ––– -1.6 VGS(th) gfs Forward Transconductance 8.3 ––– ––– ––– ––– -1.0 Drain-to-Source Leakage Current IDSS ––– ––– -25 IGSS Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 Dynamic Electrical Characteristics @ TJ.


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