AUIRF7734M2TR1

PD - 96413A AUTOMOTIVE GRADE AUIRF7734M2TR AUIRF7734M2TR1 Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead Free, RoHS Compliant and Halogen Free Automotive Qualified * Applicable DirectFET® Outline and Substrate Outline  SB SC M2 M4 Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 3.8mΩ max. ID (Silicon Limited) Qg 4.9mΩ 72A 48nC S D G S D M2 DirectFET® ISOMETRIC L4 L6 L8 Description The AUIRF7734M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET ® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with th...