AUIRF7732S2TR1

AUIRF7732S2PbF AUIRF7732S2TR/TR1 Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free D G DirectFET® Power MOSFET ‚ V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 40V 5.5mΩ 6.95mΩ 55A 30nC S S D Applicable DirectFET Outline and Substrate Outline  SB SC M2 M4 SC DirectFET ™ ISOMETRIC L4 L6 L8 Description The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET ® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET ® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET ® packaging platform coupled with the latest silicon technology allows the ...