AUIRF7736M2TR1

PD - 96316B AUTOMOTIVE GRADE Automotive DirectFET® Power MOSFET ‚ Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and AUIRF7736M2TR AUIRF7736M2TR1 40V 2.5mΩ 3.0mΩ 108A 72nC other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead Free, RoHS Compliant and Halogen Free Automotive Qualified * V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 5 & ) 5 5 5 & Applicable DirectFET® Outline and Substrate Outline  SB SC M2 M4 M4 DirectFET® ISOMETRIC L4 L6 L8 Description The AUIRF7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with ...