20N65

UNISONIC TECHNOLOGIES CO., LTD 20N65 20A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 20N65 is universally applied in motor control, UPS, DC choppers and switch-mode and resonant-mode power supplies.  FEATURES * RDS(ON) = 0.45Ω @VGS = 10 V * High switching speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 20N65L-T47-T 20N65G-T47-T 20N65L-T3P-T 20N65G-T3P-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 TO-3P Pin Assignment 123 GDS GDS Packing Tube Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-731.B 20N65 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Drain Current (TC=25°C) Avalanche Energy Continuous Pulsed Single Pulsed(Note 2) VGSS ID IDM EAS ±30 20 80 1200 V A A mJ Power Dissipation TO-247 TO-3P PD 367 W 416 W Junction Temperature Storage Temperature TJ TSTG +150 -55~+150 °C °C Note: 1. Absolute maximum ratings are those values beyond which the device c...