EB102H

Shenzhen Shengyuan Semiconductors Co., LTD. Product Specification EB SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY FLUORESCENT LAMP HIGH SPEED SWITCHING ELECTRONIC BALLAST WIDE SOA EB102 Absolute Maximum Ratings PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Tc=25°C SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 600 400 9 0.6 8 150 -65-150 TO-92 UNIT V V V A W °C °C Electronic Characteristics CHARACTERISTICS Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Voltage Emitter- Base Voltage Collector-Emitter Saturation Voltage Tc=25°C SYMBOL ICBO ICEO VCEO VEBO Vces TEST CONDITION VCB=600V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.1A,IB=10mA IC=0.4A,IB=0.1A IC=0.8A,IB=0.2A IC=0.2A,IB=0.04A VCE=5V,IC=1mA 8 12 8 2.5 0.8 µS 40 VCE=5V,IC=0.1A VCE=5V,IC=50mA VCC=250V, IC=5IB IB1= -IB2=0.1A 400 9 0.5 1.2 1.0 1.2 V V MIN MAX 100 250 UNIT A A V V Base-Emitter Saturation Voltage DC Current Gain Vbes hFE tS tf Storage Time Falling Time Shengyuan semiconductors 2004.10 1 Free Datasheet http://www.Datasheet4U.com Shenzhen Shengyuan Semiconductors Co., LTD. Product Specification EB SERIES TRANSISTORS SOA (DC) 10 Ic(A) EB102 Pc % 120 100 Tj 1 80 60 Ptot IS/B 0.1 40 20 0.01 1 hFE 0 Vce(V) 10 hFE - Ic 100 1000 0 50 100 150 Tj( ) 200 hFE - Ic 100 hFE Tj=125 Tj=25 Tj= − 40 100 Tj=125 Tj=25 Tj= − 4...