2SK2627
Ordering number:ENN6228A
N-Channel Silicon MOSFET
2SK2627
Ultrahigh-Speed Switching Applications
Features
· Low ON-res...
Description
Ordering number:ENN6228A
N-Channel Silicon MOSFET
2SK2627
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Low Qg.
Package Dimensions
unit:mm 2128
[2SK2627]
8.2 7.8 6.2 3
0.4 0.2
0.6
4.2
1.2
8.4 10.0
1.0 2.54
1
2
1.0 2.54
0.3 0.6
5.08 10.0 6.0
6.2 5.2
7.8
0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions
1 : Gate 2 : Source 3 : Drain SANYO : ZP (Bottom view)
2.5
Ratings 600 ±30 5 20 40 150 –55 to +150
Unit V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2.5A ID=2.5A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 3.5 1.5 3.0 1.5 700 220 110 2.0 Conditions Ratings min 600 1.0 ±100 5.5 typ max Unit V mA nA V S Ω pF pF pF
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely...
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