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IRG4BC40WSPBF Dataheets PDF



Part Number IRG4BC40WSPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG4BC40WSPBF DatasheetIRG4BC40WSPBF Datasheet (PDF)

PD - 95788B INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40WSPbF IRG4BC40WLPbF C Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Lead-Free VCES = 600V G E VCE(on) typ. = 2.05V.

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PD - 95788B INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40WSPbF IRG4BC40WLPbF C Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Lead-Free VCES = 600V G E VCE(on) typ. = 2.05V @VGE = 15V, IC = 20A n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) D2 Pak IRG4BC40WSPbF TO-262 IRG4BC40WLPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 40 20 160 160 ± 20 160 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mounted steady-state) Weight Typ. ––– 0.5 ––– 2.0 (0.07) Max. 0.77 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 02/19/10 Free Datasheet http://www.Datasheet4U.com IRG4BC40WS/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage „ 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 0.44 — V/°C VGE = 0V, IC = 1.0mA — 2.05 2.5 IC = 20A VGE = 15V Collector-to-Emitter Saturation Voltage — 2.36 — IC = 40A See Fig.2, 5 V — 1.90 — IC = 20A , TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — 13 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance … 18 28 — S VCE = 100 V, IC =20A — — 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current µA — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 2500 VGE = 0V, VCE = 600V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff E ts td(on) tr t d(off) tf E ts LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter C.


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