Document
PD - 95788B
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40WSPbF IRG4BC40WLPbF
C
Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lead-Free
VCES = 600V
G E
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
n-channel
Benefits
Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)
D2 Pak IRG4BC40WSPbF
TO-262 IRG4BC40WLPbF
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
600 40 20 160 160 ± 20 160 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case )
Units
V A
V mJ W °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mounted steady-state) Weight
Typ.
0.5 2.0 (0.07)
Max.
0.77 40
Units
°C/W g (oz)
www.irf.com
1
02/19/10
Free Datasheet http://www.Datasheet4U.com
IRG4BC40WS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage 0.44 V/°C VGE = 0V, IC = 1.0mA 2.05 2.5 IC = 20A VGE = 15V Collector-to-Emitter Saturation Voltage 2.36 IC = 40A See Fig.2, 5 V 1.90 IC = 20A , TJ = 150°C Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage 13 mV/°C VCE = VGE, IC = 250µA Forward Transconductance
18 28 S VCE = 100 V, IC =20A 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 2500 VGE = 0V, VCE = 600V, TJ = 150°C Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff E ts td(on) tr t d(off) tf E ts LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter C.