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IRG7PH28UD1PBF Dataheets PDF



Part Number IRG7PH28UD1PBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG7PH28UD1PBF DatasheetIRG7PH28UD1PBF Datasheet (PDF)

  IRG7PH28UD1PbF IRG7PH28UD1MPbF  C   VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  Ultra-low VF diode  1300Vpk repetitive transient capacity  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Tight parameter distribution  Lead-free package Benefits  Device opt.

  IRG7PH28UD1PBF   IRG7PH28UD1PBF


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