PD - 97479
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching...
PD - 97479
INSULATED GATE BIPOLAR
TRANSISTOR Features
Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free
IRG7PH35UPbF IRG7PH35U-EP
C
VCES = 1200V I NOMINAL = 20A
G E
TJ(max) = 175°C
n-channel
C
VCE(on) typ. = 1.9V
Benefits
High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation
C
GC
E
Applications
U.P.S Welding Solar inverter Induction heating
TO-247AC IRG7PH35UPbF
E GC TO-247AD IRG7PH35U-EP
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Max.
1200 55 35 20
Units
V
A
c
60 80 ±30 210 105 -55 to +175 °C V W
Thermal Resistance
Parame...
