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IRG7PH42UD1MPBF Dataheets PDF



Part Number IRG7PH42UD1MPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG7PH42UD1MPBF DatasheetIRG7PH42UD1MPBF Datasheet (PDF)

IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C VCE(on) typ. = 1.7V @IC= 30A n-c.

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IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C VCE(on) typ. = 1.7V @IC= 30A n-channel G Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation • Low EMI G Gate Base part number IRG7PH42UD1MPbF Package Type TO-247AD Form Tube Standard Pack Quantity 25 C G E TO-247AD C Collector E Emitter Orderable Part Number IRG7PH42UD1MPbF Absolute Maximum Ratings Parameter VCES V(BR) Transient IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFRM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Repetitive Transient Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Diode Continous Forward Current Diode Continous Forward Current Diode Repetitive Peak Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Max. Units V i 1200 1300 85 45 g A dh Clamped Inductive Load Current, VGE =20V c 200 120 70 35 120 ±30 313 125 -55 to +150 °C V W d Thermal Resistance RθJC (IGBT) RθJC (Diode) RθCS RθJA f Thermal Resistance Junction-to-Case-(each Diode) f Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Parameter Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 40 Max. 0.4 1.05 ––– ––– Units °C/W 1 www.irf.com © 2012 International Rectifier April 26, 2012 Free Datasheet http://www.Datasheet4U.com IRG7PH42UD1MPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ΔT J Δ V(B R )CES / Min. 1200 — — — 3.0 — — — — — — Typ. — 1.2 1.7 2.0 — 32 1.0 230 1.15 1.10 — Max. Units — — 2.0 — 6.0 — 100 — 1.30 — ±100 V Conditions VGE = 0V, IC = 100μA Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current e V/°C VGE = 0V, IC = 2.0mA (25°C-150°C) V V S μA V nA I C = 30A, VGE = 15V, TJ = 25°C I C = 30A, VGE = 15V, TJ = 150°C VCE = VGE, I C = 1.0mA VCE = 50V, IC = 30A, PW.


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