Document
IRG7PH42UD1MPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package
C
VCES = 1200V IC = 45A, TC = 100°C
G E
TJ(max) = 150°C VCE(on) typ. = 1.7V @IC= 30A
n-channel
G
Benefits
• Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation • Low EMI
G Gate
Base part number IRG7PH42UD1MPbF Package Type TO-247AD Form Tube Standard Pack Quantity 25
C G
E
TO-247AD
C Collector
E Emitter
Orderable Part Number IRG7PH42UD1MPbF
Absolute Maximum Ratings
Parameter
VCES V(BR) Transient IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFRM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Repetitive Transient Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Diode Continous Forward Current Diode Continous Forward Current Diode Repetitive Peak Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Max.
Units
V
i
1200 1300 85 45
g
A
dh
Clamped Inductive Load Current, VGE
=20V c
200 120 70 35 120 ±30 313 125 -55 to +150 °C V W
d
Thermal Resistance
RθJC (IGBT) RθJC (Diode) RθCS RθJA
f Thermal Resistance Junction-to-Case-(each Diode) f
Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Parameter
Min.
––– ––– ––– –––
Typ.
––– ––– 0.24 40
Max.
0.4 1.05 ––– –––
Units
°C/W
1
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© 2012 International Rectifier
April 26, 2012
Free Datasheet http://www.Datasheet4U.com
IRG7PH42UD1MPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
ΔT J Δ V(B R )CES /
Min.
1200 — — — 3.0 — — — — — —
Typ.
— 1.2 1.7 2.0 — 32 1.0 230 1.15 1.10 —
Max. Units
— — 2.0 — 6.0 — 100 — 1.30 — ±100 V
Conditions
VGE = 0V, IC = 100μA
Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
e
V/°C VGE = 0V, IC = 2.0mA (25°C-150°C) V V S μA V nA I C = 30A, VGE = 15V, TJ = 25°C I C = 30A, VGE = 15V, TJ = 150°C VCE = VGE, I C = 1.0mA VCE = 50V, IC = 30A, PW.