IRG7PH50K10DPbF IRG7PH50K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 50A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 35A
G E
C
G
G
Applications Industrial Motor Drive UPS Solar Inverters Welding
n-channel
G Gate
C G IRG7PH50K10DPbF C Collector
E
C G
E
I RG7...
