IRG7PH50K10DPBF

  IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 50A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 35A G E   C G G   Applications Industrial Motor Drive UPS Solar Inverters Welding n-channel G Gate C G IRG7PH50K10DPbF  C Collector E C G E I  RG7PH50K10D‐EPbF  E Emitter Features Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH50K10DPBF IRG7PH50K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V  Diode Continous Forward Current Diode Continous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Package Type TO-247AC TO-247AD Benefits High efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG7PH50K10DPBF IRG7PH50K10D-EPBF Max. 1200 90 50 160 160 20 10 ±30 4...