IRGS4B60KPBF

PD - 95643A INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 2.1V TO-220 IRGB4B60KPbF D2Pak TO-262 IRGS4B60KPbF IRGSL4B60KPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 12 6.8 Units V A c 24 24 ±20 63 31 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) V W Gate-to-Emitter Voltage Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature, for 10 sec. Thermal / Mechanical Characteristics Parameter RθJC RθCS RθJA RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient Weight Junction-to-Ambient (PCB Mount, steady state) Min. ––– ––– ––– ––– ––– Typ. ––– 0.50 ––– ––– 1.44 Max. 2.4 ––– 62 40 ––– Units °C/W d g www.irf.com 1 11/18/04 Free Datasheet http://www.Dat...