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IRGP4063D1-EPBF Dataheets PDF



Part Number IRGP4063D1-EPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGP4063D1-EPBF DatasheetIRGP4063D1-EPBF Datasheet (PDF)

  IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V   IC = 60A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 48A Applica ons  • Industrial Motor Drive  • Inverters  • UPS   • Welding  G E C G G   n-channel G Gate C G IRGP4063D1PbF  C Collector E C G E IRGP4063D1‐EPbF    E Emitter Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coe.

  IRGP4063D1-EPBF   IRGP4063D1-EPBF


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