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IRGP4262DPBF Dataheets PDF



Part Number IRGP4262DPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGP4262DPBF DatasheetIRGP4262DPBF Datasheet (PDF)

IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 24A Applications • Industrial Motor Drive • UPS G Gate G E C G G n-channel G IRGP4262DPbF TO-247AC C Collector C E C E G IRGP4262D-EPbF TO-247AD E Emitter Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coeffi.

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