Document
IRGP4263PbF IRGP4263-EPbF
Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A
G E
C
G
G
n-channel
Applications • Industrial Motor Drive • Inverters • UPS • Welding G Gate
C G IRGP4263PbF C Collector
E G
C I RGP4263‐EPbF E Emitter
E
Features
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Base part number IRG7P4263PbF IRG7P4263-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance RJC (IGBT) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) © 2013 International Rectifier Package Type TO-247AC TO-247AD
Benefits
High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Orderable Part Number IRGP4263PbF IRGP4263-EPbF
Standard Pack Form Quantity Tube 25 Tube 25
Max. 650 90 60 192 192 ±20 300 150 -40 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Units V
A
V W
C
Min. ––– ––– –––
Typ. ––– 0.24 40
Max. 0.5 ––– –––
Units °C/W
www.irf.com
July 12, 2013
Free Datasheet http://www.Datasheet4U.com
IRGP4263PbF/IRGP4263-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/ VCE(on) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage Temperature Coeff. Forward Transconductance Collector-to-Emitter Leakage Current Gate-to-Emitter Leakage Current Min. 650 — — — 5.5 — — — — — Typ. — 505 1.7 2.1 — -23 31 1.0 700 — Max. — — Units Conditions V VGE = 0V, IC = 100µA mV/°C VGE = 0V, IC = 1mA (25°C-175°C)
2.1 V IC = 48A, VGE = 15V, TJ = 25°C — IC = 48A, VGE = 15V, TJ = 175°C 7.7 V VCE = VGE, IC = 1.4mA — mV/°C VCE = VGE, IC = 1.4mA (25°C-175°C) — S VCE = 50V, IC = 48A, PW = 20µs 25 µA VGE = 0V, VCE = 650V — VGE = 0V, VCE = 650V, TJ = 175°C ±100 nA VGE = ±20V Max Units Conditions 150 IC = 48A 50 nC VGE = 15V VCC = 600V 60 2.6 1.9 mJ IC = 48A, VCC = 400V, VGE=15V 4.5 RG = 10, L = 210µH, TJ = 25°C 90 Energy losses include.