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IRGP4263-EPBF Dataheets PDF



Part Number IRGP4263-EPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGP4263-EPBF DatasheetIRGP4263-EPBF Datasheet (PDF)

  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A G E   C G G   n-channel Applications • Industrial Motor Drive • Inverters • UPS • Welding G Gate C G IRGP4263PbF  C Collector E G C I  RGP4263‐EPbF  E Emitter E Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, Ro.

  IRGP4263-EPBF   IRGP4263-EPBF



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  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A G E   C G G   n-channel Applications • Industrial Motor Drive • Inverters • UPS • Welding G Gate C G IRGP4263PbF  C Collector E G C I  RGP4263‐EPbF  E Emitter E Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Base part number IRG7P4263PbF IRG7P4263-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance RJC (IGBT) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) © 2013 International Rectifier Package Type TO-247AC TO-247AD Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Orderable Part Number IRGP4263PbF IRGP4263-EPbF Standard Pack Form Quantity Tube 25 Tube 25 Max. 650 90 60 192 192 ±20 300 150 -40 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Units V A  V W C Min. ––– ––– ––– Typ. ––– 0.24 40 Max. 0.5 ––– ––– Units °C/W www.irf.com July 12, 2013 Free Datasheet http://www.Datasheet4U.com   IRGP4263PbF/IRGP4263-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/ VCE(on) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage Temperature Coeff. Forward Transconductance Collector-to-Emitter Leakage Current Gate-to-Emitter Leakage Current Min. 650 — — — 5.5 — — — — — Typ. — 505 1.7 2.1 — -23 31 1.0 700 — Max. — — Units Conditions V VGE = 0V, IC = 100µA  mV/°C VGE = 0V, IC = 1mA (25°C-175°C) 2.1 V IC = 48A, VGE = 15V, TJ = 25°C — IC = 48A, VGE = 15V, TJ = 175°C 7.7 V VCE = VGE, IC = 1.4mA — mV/°C VCE = VGE, IC = 1.4mA (25°C-175°C) — S VCE = 50V, IC = 48A, PW = 20µs 25 µA VGE = 0V, VCE = 650V — VGE = 0V, VCE = 650V, TJ = 175°C ±100 nA VGE = ±20V Max Units Conditions 150 IC = 48A 50 nC VGE = 15V VCC = 600V 60 2.6 1.9 mJ   IC = 48A, VCC = 400V, VGE=15V 4.5  RG = 10, L = 210µH, TJ = 25°C 90 Energy losses include.


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