IRGP4640PbF IRGP4640-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
VCES = 600V IC = 40A, TC = 100°C
C
C
C
tSC ≥ 5µs, TJ(max...
IRGP4640PbF IRGP4640-EPbF
INSULATED GATE BIPOLAR
TRANSISTOR
VCES = 600V IC = 40A, TC = 100°C
C
C
C
tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V @ IC = 24A
G E
GC
E
n-channel
TO-247AC IRGP4640PbF
E GC TO-247AD IRGP4640-EP
Applications Inverters UPS Welding
G Gate
C Collector
E Emitter
Features
Low V CE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5µs short circuit SOA Lead-Free, RoHS compliant
Benefits
High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly
Standard Pack Form Quantity Tube 25 Tube 25
Base part number IRGP4640PbF IRGP4640-EPbF
Package Type TO-247AC TO-247AD
Orderable part number IRGP4640PbF IRGP4640-EPbF
Absolute Maximum Ratings
Parameter
V CES IC @ TC = 25°C IC @ TC = 100°C ICM ILM V GE PD @ TC = 25°C PD @ TC = 100°C TJ TST G Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V
Max.
600 65 40
Units
V
c
Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M...
