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IRGR3B60KD2 Dataheets PDF



Part Number IRGR3B60KD2
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGR3B60KD2 DatasheetIRGR3B60KD2 Datasheet (PDF)

PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 4.2A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing.

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PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 4.2A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.9V D-Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ Tc = 25°C IF @ Tc = 100°C IFM VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 7.8 4.2 15.6 15.6 6.0 3.2 15.6 ±20 52 21 -55 to +150 Units V A c Diode Continous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature Range, for 10 sec. V W PD @ TC = 100°C Maximum Power Dissipation °C 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter RθJC RθJC RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Junction-to-Ambient, (PCB Mount) Weight Min. ––– Typ. ––– ––– ––– 0.3 Max. 2.4 8.8 50 ––– Units °C/W d ––– ––– ––– g www.irf.com 1 03/24/03 Free Datasheet http://www.Datasheet4U.com IRGR3B60KD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units — 0.32 1.9 2.2 4.5 -8.5 1.9 1.0 200 1.5 1.5 — — — 2.4 2.6 5.5 — — 150 500 1.8 1.8 ±100 Conditions Ref.Fig. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — VCE(on) Collector-to-Emitter Voltage — — VGE(th) Gate Threshold Voltage 3.5 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — gfe ICES VFM IGES Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current — — — — — — V VGE = 0V, IC = 500µA V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 3.0A, VGE = 15V V IC = 3.0A, VGE = 15V, TJ = 150°C VCE = VGE, IC = 250µA 5,6,7 9,10,11 9,10,11 12 mV/°C VCE = VGE, IC = 1mA (25°C-150°C) S VCE = 50V, IC = 3.0A, PW = 80µs µA V nA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IF = 3.0A, VGE = 0V IF = 3.0A, VGE = 0V, TJ = 150°C VGE = ±20V, VCE = 0V 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode Min. Typ. Max. Units — — — — — — — — — — — — — — — — — — — — 13 1.5 6.6 62 39 100 18 15 110 68 91 98 190 18 17 120 91 190 23 6.6 20 2.3 9.9 75 50 120 22 21 120 80 100 140 230 22 22 140 105 — — — pF ns µJ µJ IC = 3.0A nC VCC = 400V VGE = 15V Conditions Ref.Fig. 23 CT1 IC = 3.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 25°C IC = 3.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 25°C IC = 3.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 150°C CT4 e ns CT4 CT4 13,15 WF1,WF2 14,16 CT4 WF1 WF2 e IC = 3.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 150°C VGE = 0V VCC = 30V f = 1.0MHz TJ = 150°C, IC = 15.6A, Vp = 600V 22 FULL SQUARE 10 — — µs 4 CT2 CT3 WF4 VCC=500V,VGE=+15V to 0V,RG = 100Ω TJ = 150°C, Vp = 600V, RG = 100Ω VCC=360V,VGE = +15V to 0V TJ = 150°C 17,18,19 — 38 44 µJ 20,21 Diode Reverse Recovery Time — 77 84 ns VCC = 400V, IF = 3.0A, L = 2.5mH Irr Diode Peak Reverse Recovery Current — 4.8 5.3 A VGE = 15V, RG = 100Ω CT4,WF3 ƒ Energy losses include "tail" and diode reverse recovery.  VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω. ‚ When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com Free Datasheet http://www.Datasheet4U.com IRGR3B60KD2 10 60 8 50 40 Ptot (W) 0 20 40 60 80 100 120 140 160 6 IC (A) 30 4 20 2 10 0 T C (°C) 0 0 20 40 60 80 100 120 140 160 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 10 µs IC (A) 10 IC A) 1 100 µs 1ms 1 0.1 10ms DC 0.01 1 10 100 VCE (V) 1000 10000 0 10 100 VCE (V) 1000 Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 -.


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