Document
PD - 94601A
IRGR3B60KD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient.
VCES = 600V IC = 4.2A, TC=100°C
G E
tsc > 10µs, TJ=150°C
Benefits
• Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ. = 1.9V
D-Pak
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ Tc = 25°C IF @ Tc = 100°C IFM VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
Max.
600 7.8 4.2 15.6 15.6 6.0 3.2 15.6 ±20 52 21 -55 to +150
Units
V A
c
Diode Continous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature Range, for 10 sec.
V W
PD @ TC = 100°C Maximum Power Dissipation
°C 300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
RθJC RθJC RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Junction-to-Ambient, (PCB Mount) Weight
Min.
–––
Typ.
––– ––– ––– 0.3
Max.
2.4 8.8 50 –––
Units
°C/W
d
––– ––– –––
g
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1
03/24/03
Free Datasheet http://www.Datasheet4U.com
IRGR3B60KD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
— 0.32 1.9 2.2 4.5 -8.5 1.9 1.0 200 1.5 1.5 — — — 2.4 2.6 5.5 — — 150 500 1.8 1.8 ±100
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — VCE(on) Collector-to-Emitter Voltage — — VGE(th) Gate Threshold Voltage 3.5 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — gfe ICES VFM IGES Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current — — — — — —
V VGE = 0V, IC = 500µA V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 3.0A, VGE = 15V V IC = 3.0A, VGE = 15V, TJ = 150°C VCE = VGE, IC = 250µA
5,6,7 9,10,11 9,10,11 12
mV/°C VCE = VGE, IC = 1mA (25°C-150°C) S VCE = 50V, IC = 3.0A, PW = 80µs µA V nA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IF = 3.0A, VGE = 0V IF = 3.0A, VGE = 0V, TJ = 150°C VGE = ±20V, VCE = 0V
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode
Min. Typ. Max. Units
— — — — — — — — — — — — — — — — — — — — 13 1.5 6.6 62 39 100 18 15 110 68 91 98 190 18 17 120 91 190 23 6.6 20 2.3 9.9 75 50 120 22 21 120 80 100 140 230 22 22 140 105 — — — pF ns µJ µJ IC = 3.0A nC VCC = 400V VGE = 15V
Conditions
Ref.Fig.
23 CT1
IC = 3.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 25°C IC = 3.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 25°C IC = 3.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 150°C
CT4
e
ns
CT4
CT4 13,15 WF1,WF2 14,16 CT4 WF1 WF2
e
IC = 3.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 150°C VGE = 0V VCC = 30V f = 1.0MHz TJ = 150°C, IC = 15.6A, Vp = 600V
22
FULL SQUARE 10 — — µs
4 CT2 CT3 WF4
VCC=500V,VGE=+15V to 0V,RG = 100Ω TJ = 150°C, Vp = 600V, RG = 100Ω VCC=360V,VGE = +15V to 0V TJ = 150°C
17,18,19 — 38 44 µJ 20,21 Diode Reverse Recovery Time — 77 84 ns VCC = 400V, IF = 3.0A, L = 2.5mH Irr Diode Peak Reverse Recovery Current — 4.8 5.3 A VGE = 15V, RG = 100Ω CT4,WF3 Energy losses include "tail" and diode reverse recovery. VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω. When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994.
2
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Free Datasheet http://www.Datasheet4U.com
IRGR3B60KD2
10
60
8
50
40
Ptot (W)
0 20 40 60 80 100 120 140 160 6
IC (A)
30
4
20
2
10
0 T C (°C)
0 0 20 40 60 80 100 120 140 160 T C (°C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
100
100
10 10 µs
IC (A)
10
IC A)
1
100 µs 1ms
1
0.1
10ms DC
0.01 1 10 100 VCE (V) 1000 10000
0 10 100 VCE (V) 1000
Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C
Fig. 4 -.