IRGR2B60KDPBF

  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE IRGR2B60KDPbF  C   VCES = 600V IC = 3.7A, TC = 100°C G E Features  Low VCE (ON) Non Punch Through IGBT technology  Low Diode VF  10µs Short Circuit Capability  Square RBSOA  Ultra-soft Diode Reverse Recovery Characteristics  Positive VCE (ON) temperature co-efficient  Lead-free Benefits  Benchmark Efficiency for Motor Control  Rugged transient performance for increased reliability  Excellent current sharing in parallel operation  Low EMI TJ(MAX) = 150°C VCE(ON) typ. = 1.95V n-channel   C E G D-Pak G Gate C Collector E Emitter Base part number IRGR2B60KDPbF Package Type D-Pak Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000   Orderable Part Number IRGR2B60KDPbF IRGR2B60KDTRPbF IRGR2B60KDTRLPbF IRGR2B60KDTRRPbF   Max. 600 6.3 3.7 8.0 8.0 6.3 3.7 8.0 ±20 35 14 -55 to +150 Units V Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V  Clamped Inductive Load Current, VGE = 20V  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature...