IRGS15B60KPBF

PD - 96358 INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free IRGS15B60KPbF C VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. D2Pak IRGS15B60KPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Vge = 15V Clamped Inductive Load Current Vge = 20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Max. 600 31 15 62 62 ±20 208 83 -55 to +150 Units V A f V W PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec. °C 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter RθJC (IGBT) RθCS RθJA Junction-to-Case-IGBT Case-to-Sink (flat, greased surface) Weight Junction-to-Ambient (PCB Mount steady state) Min. ––– ––– ––– ––– Typ. ––– 0.5 ––– 1.44 Max. 0.6 ––– 40 ––– Units °C/W c g (oz) www.irf.com 02/22/11 1 Free Datasheet http://www.Datasheet4U.com IRGS15B60KPbF Electrical Characteristics @ T J = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown V...