Silicon Transistor. 13001 Datasheet

13001 Datasheet PDF, Equivalent


Part Number

13001

Description

NPN Epitaxial Silicon Transistor

Manufacture

Elite

Total Page 1 Pages
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13001 Datasheet
13001
NPN Epitaxial Silicon Transistor
Features
Collector-Emitter Voltage: VCEO= 400V
Collector Dissipation: PC(max)= 1000mW
TO-126
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
600
400
7
200
1000
150
-55~+150
V
V
V
mA
mW
oC
oC
1. Emitter 2. Collector 3. Base
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-emitter Voltage
Transition Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
ff
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=600V, IE=0
VCE=400V, IB=0
VEB=7V, IC=0
VCE=20V, IC=20mA
VCE=10V, IC=0.25mA
IC=50mA, IB=10mA
IC=50mA, IB=10mA
IE= 100mA
VCE=20V, IC=20mA
f=1MHz
Fall Time
Storage Time
tf IC=50mA, IB1=-1B2=5mA,
ts Vcc= 45V
Min
600
400
7
10
5
8
Max
100
200
100
40
0.5
1.2
1.1
0.3
1.5
Unit
V
V
V
A
A
A
V
V
V
MHz
µS
µS
hFE(1) CLASSIFICATION
Classification
hFE(1)
10-15
15-20
20-25
25-30
30-35
35-40
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk
/1
Part No.: 13001
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Features Datasheet pdf 13001 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCE O= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximum Ratin gs (TA=25oC) Characteristic Collector-B ase Voltage Collector-Emitter Voltage E mitter-Base Voltage Collector Current C ollector Dissipation Junction Temperatu re Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 600 400 7 20 0 1000 150 -55~+150 Unit V V V mA mW o o C C 1. Emitter 2. Collector 3. Ba se Electrical Characteristics (TA=25oC ) Characteristic Collector-Base Breakdo wn Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut -off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturat ion Voltage Base-Emitter Saturation Vol tage Base-emitter Voltage Transition Fr equency Fall Time Storage Time Symbol B VCBO BVCEO BVEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE ff tf ts T est Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=6.
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