A733

A733 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating -60 -50 -5 -150 250 150 -55~+150 Unit V V V mA mW o o C C Electrical Characteristics (TA=25oC) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Test Conditions IC= -5µA, IE=0 IC= -1mA, IB=0 IE= -50µA, IC=0 VCB= -60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA IC= -100mA, IB= -10mA VCE= -6V, IC= -10mA f= 30MHz 50 180 MHz 90 200 -0.18 Min -60 -50 -5 0.1 01 600 -0.3 V Typ Max Unit V V V µA µA hFE CLASSIFICATION Classification hFE R 90-180 Q 135-270 P 200-400 K 300-600 Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected] Part No.: A733 Page: 1 / 1 Free Datasheet http://www.Datasheet4U.com ...