DMN65D8L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON)
3Ω @ VGS = 10V 4Ω @ VGS = 5V
ID TA = +2...
DMN65D8L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON)
3Ω @ VGS = 10V 4Ω @ VGS = 5V
ID TA = +25°C
310mA 270mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
DC-DC converters Power-management functions Battery operated systems and solid-state relays Drivers: relays, solenoids, lamps, hammers, displays,
memories,
transistors, etc.
SOT23 (Standard)
Features and Benefits
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface-Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) An automotive-compliant part is available under separate
datasheet (DMN65D8LQ)
Mechanical Data
Package: SOT23 Package Material: Molded Plastic. UL Flammability Classification
Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208.
Lead Free Plating. Matte Tin Finish Annealed over Alloy 42 Leadframe e3 Terminal Connections: See Diagram Weight: 0.008487 grams (Approximate)
D
D
ESD PROTECTED TO 1kV
Top View
G
S
Top View Pin Configuration
G
Gate Protection Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN65D8L-7 DMN65D8L-13
Package
SOT23 (S...