DRA5143E

DRA5143E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5143E DRA2143E in SMini3 type package  Features  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Unit: mm  Marking Symbol: L5  Packaging DRA5143E0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 1: Base 2: Emitter 3: Collector Panasonic JEITA Code R1 R2  Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating –50 –50 –100 150 150 –55 to +150 Unit V V mA mW °C °C SMini3-F2-B SC-85  C B E Resistance value R1 R2 Typ 4.7 4.7 Max kΩ kΩ Unit V V  Electrical Characteristics Ta = 25°C±3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Input resistance Resistance ratio Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VI(on) VI(off) R1 R1 / R2 Conditions IC = –10 µA, IE = 0 IC = –2 mA, IB = 0 VCB = –50 V, IE = 0 VCE = –50 V, IB = 0 VEB = –6 V, IC = 0 VCE = –10 V, IC = –5 mA IC = –10 mA, IB = – 0.5 mA VCE = – 0.2 V, IC = –5 mA...