DRA5113Z0L

Doc No. TT4-EA-11569 Revision. 3 Product Standards Transistors with Built-in Resistor DRA5113Z0L DRA5113Z0L Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5113Z DRA2113Z in SMini3 type package  Features  Low collector-emitter saturation voltage Vce(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 Unit: mm 2.0 0.3 3 0.13 1.25 2.1 0.9 (0.65) (0.65) 1.3  Marking Symbol: L1  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic JEITA Code SMini3-F2-B SC-85 ―  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Operating ambient temperature Storage temperature VCBO VCEO IC PT Tj Topr Tstg Rating -50 -50 -100 150 150 -40 to +85 -55 to +150 Unit V V mA mW °C °C °C Internal Connection B R1 R2 C E Resistance value  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) ICEO Emitter-base cutoff current (Collector open) IEBO Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) Vi(on) Input voltage Vi(off) Input resistance R1 Resistance ratio R1/R2 R1 R2 Typ 1 10 k k Conditions ...