IRF6614PBF

PD -97090 Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 1.4nC IRF6614PbF IRF6614TRPbF RDS(on) Qoss 9.5nC RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l l VDSS Qg tot VGS Qgd 6.0nC 40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V Qrr 5.5nC Vgs(th) 1.8V 19nC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT ST DirectFET™ ISOMETRIC Description The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this ...