IRF6617PBF

PD -97082 IRF6617PbF IRF6617TRPbF l l l l l l l l l RoHS Compliant ‰ Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible ‰ Compatible with existing Surface Mount Techniques ‰ DirectFET™ Power MOSFET Š VDSS 30V RDS(on) max 8.1mΩ@VGS = 10V 10.3mΩ@VGS = 4.5V Qg(typ.) 11nC Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT ST DirectFET™ ISOMETRIC Description The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6617PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at h...