Document
PD -97082
IRF6617PbF IRF6617TRPbF
l l l l l l l l l
RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
VDSS
30V
RDS(on) max
8.1mΩ@VGS = 10V 10.3mΩ@VGS = 4.5V
Qg(typ.)
11nC
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT
ST
DirectFET ISOMETRIC
Description
The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6617PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6617PbF has been optimized for parameters that are critical in synchronous buck converters including RDS(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C PD @TA = 25°C PD @TA = 70°C EAS IAR TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS Pulsed Drain Current Power Dissipation
Max.
30 ±20 55 14 11 120 42 2.1
Units
V
i f Power Dissipation f
Power Dissipation
i Ãf @ 10V f
A
W mJ A W/°C °C
Single Pulse Avalanche Energy Avalanche Current
Ã
d
1.4 27 12 0.017 -40 to + 150
Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RθJA RθJA RθJA RθJC RθJ-PCB
fj gj Junction-to-Ambient hj Junction-to-Case ij
Junction-to-Ambient Junction-to-Ambient
Parameter
Typ.
––– 12.5 20 ––– 1.0
Max.
58 ––– ––– 3.0 –––
Units
°C/W
Junction-to-PCB Mounted
Notes through are on page 2
www.irf.com
1
Free Datasheet http://www.Datasheet4U.com
5/3/06
IRF6617PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 39 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. Max. Units
––– 25 6.2 7.9 ––– -5.4 ––– ––– ––– ––– ––– 11 3.1 1.0 4.0 2.9 5.0 10 11 34 12 3.7 1300 430 160 ––– ––– 8.1 10.3 2.35 ––– 1.0 150 100 -100 ––– 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 15V ƒ = 1.0MHz ns nC nC VDS = 15V VGS = 4.5V ID = 12A See Fig. 16 S nA V mV/°C µA V mΩ
Conditions
VGS = 0V, ID = 250µA VGS = 10V, ID = 15A e VGS = 4.5V, ID = 12A e VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 12A
mV/°C Reference to 25°C, ID = 1mA
VDS = 15V, VGS = 0V VDD = 16V, VGS = 4.5V e ID = 12A Clamped Inductive Load
Diode Characteristics
Parameter
IS ISM VSD trr Qrr
Notes:
Min.
––– ––– ––– ––– –––
Typ. Max. Units
––– ––– 0.81 16 7.2 53 A 120 1.0 24 11 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V e TJ = 25°C, IF = 12A di/dt = 100A/µs e
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25°C, L = 0.40mH, RG = 25Ω, IAS = 12A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to .