Power MOSFET
PD - 97328A
IRF6709S2TRPbF IRF6709S2TR1PbF
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooli...
Description
PD - 97328A
IRF6709S2TRPbF IRF6709S2TR1PbF
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
2.8nC
RDS(on) Qgs2
1.1nC
RDS(on) Qoss
4.6nC
25V max ±20V max
5.9mΩ@10V 10.1mΩ@4.5V
Qrr
9.3nC
Vgs(th)
1.8V
8.1nC
Applicable DirectFET Outline and Substrate Outline S1 S2 SB M2 M4 L4
S1
L6
DirectFET ISOMETRIC
L8
Description
The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this ...
Similar Datasheet