IRF6709S2TR1PBF

PD - 97328A IRF6709S2TRPbF IRF6709S2TR1PbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application  l Compatible with existing Surface Mount Techniques l 100% Rg tested  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified)   VDSS Qg  tot VGS Qgd 2.8nC RDS(on) Qgs2 1.1nC RDS(on) Qoss 4.6nC 25V max ±20V max 5.9mΩ@10V 10.1mΩ@4.5V Qrr 9.3nC Vgs(th) 1.8V 8.1nC Applicable DirectFET Outline and Substrate Outline  S1 S2 SB M2 M4 L4 S1 L6 DirectFET ™ ISOMETRIC L8 Description The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this ...