Document
PD - 97568
HEXFET® Power MOSFET plus Schottky Diode
l RoHS Compliant Containing No Lead and Halogen Free l
IRF6728MPbF IRF6728MTRPbF
V R R
Typical values (unless otherwise specified)
DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V l Low Profile (<0.7 mm) Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Dual Sided Cooling Compatible l Ultra Low Package Inductance 28nC 8.7nC 3.1nC 29nC 22nC 1.8V l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters S l Optimized for Sync. FET socket of Sync. Buck Converter G D D l Low Conduction and Switching Losses S l Compatible with existing Surface Mount Techniques l 100% Rg tested DirectFET ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
V
SQ
SX
ST
MQ
MX
MT
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Description
The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6728MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6728MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR
10
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current
g
e e f
Ãg
h
VGS, Gate-to-Source Voltage (V)
30 ±20 23 18 140 180 230 18
14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 20 40 60 ID= 18A VDS= 24V VDS= 15V VDS= 6V
A
mJ A
8 6 4 2 0 2 4 6 8 10 12 14 TJ = 125°C
ID = 23A
TJ = 25°C 16 18 20
80
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A.
www.irf.com
1
9/24/10
Free Datasheet http://www.Datasheet4U.com
IRF6728MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 61 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. Max. Units
––– 2.7 1.8 2.8 1.8 -4.8 ––– ––– ––– ––– ––– 28 6.5 3.1 8.7 9.7 11.8 22 1.3 16 34 19 19 4110 970 340 ––– ––– 2.5 3.6 2.35 ––– 500 5.0 100 -100 ––– 42 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF ns nC
Ω
Conditions
VGS = 0V, ID = 1.0mA
V
mV/°C Reference to 25°C, ID = 6mA mΩ VGS = 10V, ID = 23A VGS = 4.5V, ID V VDS = VGS, ID = 100μA
i = 18A i
mV/°C VDS = VGS, ID = 10mA μA VDS = 24V, VGS = 0V mA nA S VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 18A VDS = 15V nC VGS = 4.5V ID = 18A See Fig. 15 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 18A RG = 1.8Ω See Fig. 17 VGS = 0V VDS = 15V ƒ = 1.0MHz
Ãi
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Sou.