IRF6810STR1PBF

PD -96393 IRF6810STRPbF IRF6810STR1PbF l l l l l l l l l l DirectFET plus Power MOSFET ‚ RoHS Compliant and Halogen Free  Typical values (unless otherwise specified) Low Profile (<0.7 mm) Dual Sided Cooling Compatible  VDSS VGS RDS(on) RDS(on) Ultra Low Package Inductance 25V max ±16V max 4.0mΩ @ 10V 5.6mΩ @ 4.5V Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Optimized for Control FET Application 7.4nC 2.7nC 0.98nC 12nC 8.9nC 1.6V Compatible with existing Surface Mount Techniques  100% Rg tested Footprint compatible to DirectFET D G S D ® Applicable DirectFET Outline and Substrate Outline  S1 S2 SB M2 M4 L4 S1 L6 DirectFET®plus ISOMETRIC L8 Description The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6810STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant...