IRF6898MTRPBF

HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide ‚ l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible  l Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested IRF6898MPbF IRF6898MTRPbF RDS(on) RDS(on) Typical values (unless otherwise specified) VDSS 25V max VGS ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V Qg tot Q gd 15nC Qgs2 4.7nC Qrr 66nC Q oss 43nC Vgs(th) 1.6V 41nC S D G S D MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP DirectFET ™ ISOMETRIC Description The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6898MPbF balances industry...