IRF6894MPBF

l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±16V max 0.9mΩ@ 10V 1.4mΩ@ 4.5V l Dual Sided Cooling Compatible  Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Package Inductance 26nC 9.8nC 2.8nC 56nC 31nC 1.6V l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter  l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested ISOMETRIC MX l Footprint compatible to DirectFET™ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) l DirectFET®plus MOSFET with Schottky Diode ‚ IRF6894MPbF IRF6894MTRPbF PD - 97633A SQ SX ST MQ MX MT MP Description The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. T...