IRF6892STRPbF IRF6892STR1PbF
l l l l l l l l l
PD - 97770
RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual...
IRF6892STRPbF IRF6892STR1PbF
l l l l l l l l l
PD - 97770
RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques 100% Rg tested
DirectFET®plus MOSFET with
Schottky Diode
Typical values (unless otherwise specified)
VDSS
Qg
tot
VGS
Qgd
6.0nC
RDS(on)
Qgs2
2.3nC
RDS(on)
Qoss
16nC
25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V
Qrr
39nC
Vgs(th)
1.8V
17nC
G D
S S D
S
Applicable DirectFET Outline and Substrate Outline
S1 S2 S3C M2 M4
S3C
L4 L6
ISOMETRIC
L8
Description
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both...