IRF6892STR1PBF

IRF6892STRPbF IRF6892STR1PbF l l l l l l l l l PD - 97770 RoHS Compliant and Halogen Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques  100% Rg tested DirectFET®plus MOSFET with Schottky Diode ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.0nC RDS(on) Qgs2 2.3nC RDS(on) Qoss 16nC 25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V Qrr 39nC Vgs(th) 1.8V 17nC G D S S D S Applicable DirectFET Outline and Substrate Outline  S1 S2 S3C M2 M4 S3C L4 L6 ISOMETRIC L8 Description The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both...